By Francis Balestra
This e-book deals a accomplished assessment of the cutting-edge in cutting edge Beyond-CMOS nanodevices for constructing novel functionalities, good judgment and stories devoted to researchers, engineers and students. It relatively specializes in the curiosity of nanostructures and nanodevices (nanowires, small slope switches, 2nd layers, nanostructured fabrics, etc.) for complex greater than Moore (RF-nanosensors-energy harvesters, on-chip digital cooling, etc.) and Beyond-CMOS good judgment and stories purposes.
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Extra info for Beyond CMOS Nanodevices 1
Finally, the SiO2 hard mask should be etched using SiN spacers as a mask. This etch is a delicate step when implementing STL with the SiO2/Si/SiN material combination. Commonly used reactive ion etching with CHF3/CF4 chemistry only provides an etch rate of SiO2 a few times higher compared to SiN; so care must be taken not to erode the SiN spacer while etching SiO2 hard mask. There is a delicate trade-off in the SiO2 hard mask thickness given the targeted silicon nanowire width. A thicker SiO2 hard mask will cause more erosion of the SiN spacer and thus put a lower limit on how thin SiN spacer materials can be and therefore limit the minimum silicon nanowire width that can be achieved.
Optical lithography can also be used to create DNA patterns [LEN 11] but the resolution is limited. 12). In the present case, a wider area is lithographed to keep the nanowire away from the border effects. Unlike the process described in [TAN 04], the lift-off is performed after the glutaraldehyde grafting because the molecule is very reactive and will be physisorbed on the substrate if the resist is removed before. The lift-off is facilitated by the large difference between the thickness of the PMMA layer and the APTES one, 270 nm against 5–6 nm.
Black and white boxes on top of plot and dashed lines: line/space regions and desired intensity profile. Simulated using the LayoutBEAMER software. a) Line/space ratio 1:1 and b) line/space ratio 1:3 An efficient way to overcome this limitation is to utilize the excellent overlay accuracy offered by state-of-the-art EBL systems and to use a divide-and-conquer approach to replace the challenging task of fabricating such ultra-dense nanoscale features by the challenge of fabricating two sets of less densely packed but well-aligned nanowire features.
Beyond CMOS Nanodevices 1 by Francis Balestra