By Francis Balestra
This publication deals a entire assessment of the cutting-edge in leading edge Beyond-CMOS nanodevices for constructing novel functionalities, common sense and stories devoted to researchers, engineers and scholars. The booklet will really concentrate on the curiosity of nanostructures and nanodevices (nanowires, small slope switches, 2nd layers, nanostructured fabrics, etc.) for complicated greater than Moore (RF-nanosensors-energy harvesters, on-chip digital cooling, etc.) and Beyond-CMOS good judgment and stories purposes.
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Extra info for Beyond CMOS Nanodevices 2
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Cross-sectional TEM images: a) 7 nm nanowire width and b) 8 nm gate length Recent demonstrations of multigate transistors (MugFET), namely gate-all-around (GAA) [TAC 10, LI 09, KIM 08], Omega-Gate [JIA 09, YAN 02, JAH 05, BUR 10], and TG [SAI 10] have been reported. Obviously, there will be a compromise between the improvement in the electrostatic of MuGFET devices and the fabrication complexity of making gates on all sides of the wire. If the GAA structure is expected to be the ideal geometry that maximizes electrostatic gate control, it also requires a more complicated fabrication process.
Beyond CMOS Nanodevices 2 by Francis Balestra